2N7002_NL Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – N-Channel Enhancement Mode Field Effect Transistor

November 1995
2N7000 / 2N7002 / NDS7002A
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
These N-Channel enhancement mode field effect transistors
are produced using Fairchild's proprietary, high cell density,
DMOS technology. These products have been designed to
minimize on-state resistance while provide rugged, reliable,
and fast switching performance. They can be used in most
applications requiring up to 400mA DC and can deliver
pulsed currents up to 2A. These products are particularly
suited for low voltage, low current applications such as small
servo motor control, power MOSFET gate drivers, and other
switching applications.
High density cell design for low R_DS(ON).
Voltage controlled small signal switch.
Rugged and reliable.
High saturation current capability.
___________________________________________________________________________________________
D
D
G
S
TO-92
2N7000
G
(TO-236AB)
2N7002/NDS7002A
Absolute Maximum Ratings T_A = 25°C unless otherwise noted
Symbol Parameter
2N7000
2N7002
V_DSS
Drain-Source Voltage
60
V_DGR
Drain-Gate Voltage (R_GS < 1 MΩ)
60
V_GSS
Gate-Source Voltage - Continuous
±20
- Non Repetitive (tp < 50µs)
±40
I_D
Maximum Drain Current - Continuous
- Pulsed
200
115
500
800
P_D
Maximum Power Dissipation
Derated above 25^oC
400
200
3.2
1.6
T_J,T_STG
T_L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering
Purposes, 1/16" from Case for 10 Seconds
-55 to 150
300
THERMAL CHARACTERISTICS
R_θJA
Thermal Resistance, Junction-to-Ambient
312.5
625
© 1997 Fairchild Semiconductor Corporation
S
NDS7002A
Units
V
V
V
280
1500
300
2.4
-65 to 150
mA
mW
mW/°C
°C
°C
417
°C/W
2N7000.SAM Rev. A1