2N7002W_10 Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – N-Channel Enhancement Mode Field Effect Transistor

February 2010
2N7002W
N-Channel Enhancement Mode Field Effect Transistor
Features
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Ultra-Small Surface Mount Package
• Lead Free/RoHS Compliant
D
S
G
SOT-323
Marking : 2N
Absolute Maximum Ratings * T_A = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
V_DSS Drain-Source Voltage
60
V
V_DGR Drain-Gate Voltage R_GS  1.0M
60
V
V_GSS Gate-Source Voltage
Continuous
±20
Pulsed
±40
V
I_D
Drain Current
Continuous
115
Continuous @ 100°C
73
mA
Pulsed
800
T_{J ,} T_STG Junction and Storage Temperature Range
-55 to +150
C
* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.
Thermal Characteristics
Symbol
Parameter
Value
P_D
Total Device Dissipation
200
Derating above T_A = 25°C
1.6
R_JA Thermal Resistance, Junction to Ambient *
625
* Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. Minimum land pad size.
Units
mW
mW/C
C/W
© 2010 Fairchild Semiconductor Corporation
2N7002W Rev. A1
1
www.fairchildsemi.com