2N7002V_10 Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – N-Channel Enhancement Mode Field Effect Transistor

April 2010
2N7002V/VA
N-Channel Enhancement Mode Field Effect Transistor
Features
• Dual N-Channel MOSFET
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Ultra-Small Surface Mount Package
• Lead Free By Design/RoHS Compliant
(Pin4)
SOT-563F
* Pin1 and Pin4 are exchangeable.
Marking : AB
Marking : AC
Absolute Maximum Ratings * T_A = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
V_DSS Drain-Source Voltage
60
V
V_DGR Drain-Gate Voltage R_GS ≤ 1.0MΩ
60
V
V_GSS Gate-Source Voltage
Continuous
±20
Pulsed
±40
V
I_D
Drain Current
Continuous
280
mA
Pulsed
1.5
A
T_{J ,} T_STG Junction and Storage Temperature Range
-55 to +150
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.
Thermal Characteristics
Symbol
Parameter
Value
P_D
Total Device Dissipation
250
Derating above T_A = 25°C
2.0
R_θJA Thermal Resistance, Junction to Ambient *
500
* Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch, Minimum land pad size.
Units
mW
mW/°C
°C/W
© 2010 Fairchild Semiconductor Corporation
2N7002V/VA Rev. A1
1
www.fairchildsemi.com