2N7002V Datasheet, PDF (1/6 Pages) Diodes Incorporated – DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

October 2007
2N7002V/VA
N-Channel Enhancement Mode Field Effect Transistor
Features
• Dual N-Channel MOSFET
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Ultra-Small Surface Mount Package
• Lead Free By Design/RoHS Compliant
(Pin1)
SOT - 563F
Marking : AB
Marking : AC
Absolute Maximum Ratings * T_a = 25°C unless otherwise noted
Symbol
Parameter
Value
V_DSS
Drain-Source Voltage
60
V_DGR
Drain-Gate Voltage R_GS ≤ 1.0MΩ
60
V_GSS
Gate-Source Voltage
Continuous
±20
Pulsed
±40
I_D
Drain Current
Continuous
280
Pulsed
1.5
T_{J ,} T_STG
Junction and Storage Temperature Range
-55 to +150
* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.
Units
V
V
V
mA
A
°C
Thermal Characteristics
Symbol
Parameter
P_D
Total Device Dissipation
Derating above TA = 25°C
R_θJA
Thermal Resistance, Junction to Ambient *
* Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. Minimun land pad size,
Value
250
2.0
500
Units
mW
mW/°C
°C/W
© 2007 Fairchild Semiconductor Corporation
2N7002V/VA Rev. A
1
www.fairchildsemi.com