2N7002T Datasheet, PDF (1/6 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

October 2007
2N7002T
N-Channel Enhancement Mode Field Effect Transistor
Features
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Ultra-Small Surface Mount Package
• Lead Free/RoHS Compliant
D
S
G
SOT - 523F
Marking : AA
Absolute Maximum Ratings * T_a = 25°C unless otherwise noted
Symbol
Parameter
Value
V_DSS
Drain-Source Voltage
60
V_DGR
Drain-Gate Voltage R_GS ≤ 1.0MΩ
60
V_GSS
Gate-Source Voltage
Continuous
±20
Pulsed
±40
I_D
Drain Current
Continuous
115
Continuous @ 100°C
73
Pulsed
800
T_J
T_STG
Junction Temperature
Storage Temperature Range
150
-55 to +150
* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.
Units
V
V
V
mA
°C
°C
Thermal Characteristics
Symbol
Parameter
P_D
Total Device Dissipation
Derating above TA = 25°C
R_θJA
Thermal Resistance, Junction to Ambient *
* Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. Minimun land pad size,
Value
200
1.6
625
Units
mW
mW/°C
°C/W
© 2007 Fairchild Semiconductor Corporation
2N7002T Rev. A
1
www.fairchildsemi.com