2N7002KW Datasheet, PDF (1/6 Pages) Pan Jit International Inc. – 60V N-Channel Enhancement Mode MOSFET - ESD Protected

May 2011
2N7002KW
N-Channel Enhancement Mode Field Effect Transistor
Features
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Ultra-Small Surface Mount Package
• Pb Free/RoHS Compliant
• ESD HBM=1000V as per JESD22 A114 and ESD CDM=1500V as per JESD22 C101
D
S
G ^SOT-323
Marking : 7KW
Absolute Maximum Ratings * T_A = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
V_DSS Drain-Source Voltage
60
V
V_GSS Gate-Source Voltage
±20
V
I_D
Maximum Drain Current
- Continuous
310
mA
T_J = 100°C
195
mA
- Pulsed
1.2
A
T_J
T_STG
Operating Junction Temperature Range
Storage Temperature Range
-55 to +150
°C
-55 to +150
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.
Thermal Characteristics
Symbol
Parameter
Value
P_D
Total Device Dissipation
300
Derating above T_A = 25°C
2.4
R_θJA Thermal Resistance, Junction to Ambient *
410
* Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. Minimum land pad size
Units
mW
mW/°C
°C/W
© 2011 Fairchild Semiconductor Corporation
2N7002KW Rev. A0
1
www.fairchildsemi.com