2N7000TA Datasheet, PDF (1/3 Pages) Fairchild Semiconductor – Advanced Small Signal MOSFET

Advanced Small Signal MOSFET 2N7000BU/2N7000TA
FEATURES
n Fast Switching Times
n Improved Inductive Ruggedness
n Lower Input Capacitance
n Extended Safe Operating Area
n Improved High Temperature Reliability
BV_DSS = 60 V
R_DS(on) = 5.0 Ω
I_D = 200 mA
TO-92
Absolute Maximum Ratings
Symbol
V_DSS
I_D
I_DM
V_GS
P_D
T_J , T_STG
T_L
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (T_C=25℃)
Continuous Drain Current (T_C=100℃)
Drain Current-Pulsed
①
Gate-to-Source Voltage
Total Power Dissipation (T_C=25℃)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8? from case for 5-seconds
Thermal Resistance
Symbol
R_θJA
Characteristic
Junction-to-Ambient
1.Source 2. Gate 3. Drain
Value
60
200
110
1000
±30
400
3.2
- 55 to +150
300
Units
V
mA
mA
V
mW
mW/℃
℃
Typ.
--
Max.
312.5
Units
℃/W
Rev. B