2N7000 Datasheet, PDF (1/14 Pages) Motorola, Inc – CASE 29-04, STYLE 22 TO-92 (TO-226AA)

November 1995
2N7000 / 2N7002 / NDS7002A
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
These N-Channel enhancement mode field effect transistors
are produced using Fairchild's proprietary, high cell density,
DMOS technology. These products have been designed to
minimize on-state resistance while provide rugged, reliable,
and fast switching performance. They can be used in most
applications requiring up to 400mA DC and can deliver
pulsed currents up to 2A. These products are particularly
suited for low voltage, low current applications such as small
servo motor control, power MOSFET gate drivers, and other
switching applications.
High density cell design for low R_DS(ON).
Voltage controlled small signal switch.
Rugged and reliable.
High saturation current capability.
___________________________________________________________________________________________
D
DGS
TO-92
G
S
Absolute Maximum Ratings
Symbol Parameter
T_A = 25°C unless otherwise noted
2N7000
2N7002
V_DSS
Drain-Source Voltage
60
V_DGR
Drain-Gate Voltage (R_GS < 1 MΩ)
60
V_GSS
Gate-Source Voltage - Continuous
±20
- Non Repetitive (tp < 50µs)
I_D
Maximum Drain Current - Continuous
- Pulsed
P_D
Maximum Power Dissipation
Derated above 25^oC
T_J,T_STG Operating and Storage Temperature Range
T_L
Maximum Lead Temperature for Soldering
Purposes, 1/16" from Case for 10 Seconds
THERMAL CHARACTERISTICS
±40
200
115
500
800
400
200
3.2
1.6
-55 to 150
300
R_θJA
Thermal Resistance, Junction-to-Ambient
312.5
625
© 1997 Fairchild Semiconductor Corporation
NDS7002A
Units
V
V
V
280
1500
300
2.4
-65 to 150
mA
mW
mW/°C
°C
°C
417
°C/W
2N7000.SAM Rev. A1