2N6784 Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – 2.25A, 200V, 1.500 Ohm, N-Channel Power MOSFET

Data Sheet
December 2001
2N6784
[ /Title
(2N67
84)
/Sub-
ject
(2.25A
, 200V,
1.500
Ohm,
N-
Chan-
nel
Power
MOS-
FET)
/Autho
r ()
2.25A, 200V, 1.500 Ohm, N-Channel Power
MOSFET
The 2N6784 is an N-Channel enhancement mode silicon
gate power MOS field effect transistor designed for
applications such as switching regulators, switching
converters, motor drivers, relay drivers, and drivers for high
power bipolar switching transistors requiring high speed and
low gate drive power. This type can be operated directly from
integrated circuits.
Ordering Information
PART NUMBER
PACKAGE
BRAND
2N6784
TO-205AF
2N6784
NOTE: When ordering, use the entire part number.
Features
• 2.25A, 200V
• r_DS(ON) = 1.500Ω
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
JEDEC TO-205AF
DRAIN
(CASE)
SOURCE
GATE
©2001 Fairchild Semiconductor Corporation
2N6784 Rev. B