2N6520TA Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – PNP Epitaxial Silicon Transistor

2N6520
PNP Epitaxial Silicon Transistor
June 2009
Features
• High Voltage Transistor
• Collector-Emitter Voltage: V_CBO= -350V
• Collector Dissipation: P_C (max)=625mW
• Complement to 2N6517
Absolute Maximum Ratings* T_A = 25°C unless otherwise noted
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_J
T_STG
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Derate above 25°C
Junction Temperature
Storage Temperature
1
TO-92
1. Emitter 2. Base 3. Collector
Value
-350
-350
-5
-500
-250
0.625
5
150
-55 to +150
Unit
V
V
V
mA
mA
W
mW/°C
°C
°C
© 2009 Fairchild Semiconductor Corporation
2N6520 Rev. B1
1
www.fairchildsemi.com