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2N6520 Datasheet, PDF (1/5 Pages) Zetex Semiconductors – PNP SILICON PLANAR MEDIUM POWER TRANSISTOR
2N6520
High Voltage Transistor
• Collector-Emitter Voltage: VCEO= -350V
• Collector Dissipation: PC (max)=625mW
• Complement to 2N6517
PNP Epitaxial Silicon Transistor
1
TO-92
1. Emitter 2. Base 3. Collector
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
IB
PC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Derate above 25
TJ
TSTG
Junction Temperature
Storage Temperature
Value
-350
-350
-5
-500
-250
0.625
5
50
-55 ~ 150
Units
V
V
V
mA
mA
W
mW/°C
°C
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE
Parameter
Collector-Base Breakdown Voltage
* Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
* DC Current Gain
VCE (sat) Collector-Emitter Saturation Voltage
VBE (sat) Base-Emitter Saturation Voltage
VBE (on)
fT
Cob
CEB
tON
Base-Emitter On Voltage
* Current Gain Bandwidth Product
Output Capacitance
Emitter-Base Capacitance
Turn On Time
tOFF
Turn Off Time
* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
Test Condition
IC= -100µA, IE=0
IC= -1mA, IB=0
IE= -10µA, IC=0
VCB= -250V, IE=0
VEB= -4V, IC=0
VCE= -10V, IC= -1mA
VCE= -10V, IC= -10mA
VCE= -10V, IC= -30mA
VCE= -10V, IC= -50mA
VCE= -10V, IC= -100mA
IC= -10mA, IB= -1mA
IC= -20mA, IB= -2mA
IC= -30mA, IB= -3mA
IC= -50mA, IB= -5mA
IC= -10mA, IB= -1mA
IC= -20mA, IB= -2mA
IC= -30mA, IB= -3mA
VCE= -10V, IC= -100mA
VCE= -20V, IC= -10mA, f=20MHz
VCB= -20V, IE=0, f=1MHz
VEB= -0.5V, IC=0, f=1MHz
VBE (off)= -2V, VCC= -100V
IC= -50mA, IB1= -10mA
VCC= -100V, IC= -50mA
IB1=IB2= -10mA
Min.
-350
-350
-5
20
30
30
20
15
40
Max.
-50
-50
Units
V
V
V
nA
nA
200
200
-0.30
-0.35
-0.50
-1
-0.75
-0.85
-0.90
-2
200
6
100
200
3.5
V
V
V
V
V
V
V
V
MHz
pF
pF
ns
ns
©2002 Fairchild Semiconductor Corporation
Rev. A2, August 2002
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