2N6518 Datasheet, PDF (1/3 Pages) Samsung semiconductor – PNP EPITAXIAL SILICON TRANSISTOR

2N6518
High Voltage Transistor
• Collector-Emitter Voltage: V_CEO= -250V
• Collector Dissipation: P_C (max)=625mW
• Complement to 2N6515
PNP Epitaxial Silicon Transistor
1
TO-92
1. Emitter 2. Base 3. Collector
Absolute Maximum Ratings T_a=25°C unless otherwise noted
Symbol
Parameter
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Derate above 25°C
T_J
Junction Temperature
T_STG
Storage Temperature
• Refer to 2N6520 for graphs
Value
-250
-250
-5
-500
-250
625
5
150
-55 ~ 150
Electrical Characteristics T_a=25°C unless otherwise noted
Symbol
BV_CBO
BV_CEO
BV_EBO
I_CBO
I_EBO
h_FE
Parameter
* Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
* DC Current Gain
V_CE (sat) Collector-Emitter Saturation Voltage
V_BE (sat) Base-Emitter Saturation Voltage
V_BE (on)
f_T
C_ob
C_EB
t_ON
Base-Emitter On Voltage
* Current Gain Bandwidth Product
Output Capacitance
Emitter-Base Capacitance
Turn On Time
t_OFF
Turn Off Time
* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
Test Condition
I_C= -100µA, I_E=0
I_C= -1mA, I_B=0
I_E= -10µA, I_C=0
V_CB= -150V, I_E=0
V_EB= -4V, I_C=0
V_CE= -10V, I_C= -1mA
V_CE= -10V, I_C= -10mA
V_CE= -10V, I_C= -30mA
V_CE= -10V, I_C= -50mA
V_CE= -10V, I_C= -100mA
I_C= -10mA, I_B= -1mA
I_C= -20mA, I_B= -2mA
I_C= -30mA, I_B= -3mA
I_C= -50mA, I_B= -5mA
I_C= -10mA, I_B= -1mA
I_C= -20mA, I_B= -2mA
I_C= -30mA, I_B= -3mA
V_CE= -10V, I_C= -100mA
V_CE= -20V, I_C= -10mA, f=20MHz
V_CB= -20V, I_E=0, f=1MHz
V_EB= -0.5V, I_C=0, f=1MHz
V_BE (off)= -2V, V_CC= -100V
I_C= -50mA, I_B1= -10mA
V_CC= -100V, I_C= -50mA
I_B1=I_B2=10mA
Min.
-250
-250
-5
35
50
50
45
25
40
Units
V
V
V
mA
mA
mW
mW/°C
°C
°C
Max.
-50
-50
Units
V
V
V
nA
nA
300
220
-0.30
-0.35
-0.50
-1
-0.75
-0.85
-0.90
-2
200
6
100
200
3.5
V
V
V
V
V
V
V
V
MHz
pF
pF
ns
ns
©2002 Fairchild Semiconductor Corporation
Rev. A2, August 2002