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| 2N6517BU Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – NPN Epitaxial Silicon Transistor | |||
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2N6517
NPN Epitaxial Silicon Transistor
August 2010
Features
⢠High Voltage Transistor
⢠Collector Dissipation: PC(max) = 625mW
⢠Complement to 2N6520
⢠Suffix â-Câ means Center Collector (1. Emitter 2. Collector 3. Base)
1
TO-92
1. Emitter 2. Base 3. Collector
Absolute Maximum Ratings Ta = 25°C unless otherwise noted
Symbol
Parameter
Value
VCBO Collector-Base Voltage
2N6517
350
2N6517C
400
VCEO Collector-Emitter Voltage
2N6517
350
2N6517C
400
VEBO
IC
PC
TJ
TSTG
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
6
500
625
150
-55 ~ 150
Units
V
V
V
V
V
mA
mW
°C
°C
Electrical Characteristics Ta = 25°C unless otherwise noted
Symbol
Parameter
Conditions
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE
Collector-Base Breakdown Voltage
2N6517 IC = 100µA, IE = 0
2N6517C IC = 100µA, IE = 0
Collector-Emitter Breakdown Voltage *
2N6517 IC = 1mA, IB = 0
2N6517C IC = 1mA, IB = 0
Emitter-Base Breakdown Voltage
IE = 10µA, IC = 0
Collector Cut-off Current
VCB = 250V, IE = 0
Emitter Cut-off Current
VEB = 5V, IC = 0
DC Current Gain *
2N6517/2N6517C VCE = 10V, IC = 1mA
2N6517/2N6517C VCE = 10V, IC = 10mA
2N6517/2N6517C VCE = 10V, IC = 30mA
2N6517/2N6517C VCE = 10V, IC = 50mA
2N6517/2N6517C VCE = 10V, IC = 100mA
2N6517C VCE = 10V, IC = 5mA
Min. Max. Units
350
V
400
V
350
V
400
V
6
V
50
nA
50
nA
20
30
30
200
20
200
15
50
200
© 2010 Fairchild Semiconductor Corporation
2N6517 Rev. B1
1
www.fairchildsemi.com
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