2N6428A Datasheet, PDF (1/3 Pages) Samsung semiconductor – NPN EPITAXIAL SILICON TRANSISTOR

2N6428A
NPN Epitaxial Silicon Transistor
Features
• This device is designed for high gain, general purpose
amplifier applications at collector currents from 1uA to 200 mA.
December 2006
tm
TO92
1 23
1. Emitter 2. Base 3. Collector
Absolute Maximum Ratings * T_a = 25°C unless otherwise noted
Symbol
Parameter
Value
V_CBO
Collector-Base Voltage
60
V_CEO
Collector-Emitter Voltage
50
V_EBO
Emitter-Base Voltage
5
I_C
Collector Current - Continuous
200
P_D
Total Device Dissipation
625
T_J
Junction Temperature
150
T_STG
Storage Temperature Range
- 55 ~ 150
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics* T_C = 25°C unless otherwise noted
Symbol
Parameter
Conditions
BV_CBO
BV_CEO
BV_EBO
I_CBO
I_EBO
h_FE
V_CE (sat)
V_BE (on)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
I_C = 100µA, I_E = 0
I_C = 1mA, I_B = 0
I_E = 100µA, I_C = 0
V_CB = 30V, I_E = 0
V_BE = 5V, I_C = 0
V_CE = 5V, I_C = 0.01mA
V_CE = 5V, I_C = 0.1mA
V_CE = 5V, I_C = 1.0mA
V_CE = 5V, I_C = 10mA
I_C = 10mA, I_B = 0.5mA
I_C = 100mA, I_B = 5.0mA
V_CE = 5V, I_C = 1.0mA
f_T
Current Gain Bandwidth Product
I_C = 1mA, V_CE = 5.0V, f = 100MHz
C_ob
Output Capacitance
V_CB = 10V, I_E = 0, f = 1MHz
* DC Item are tested by Pulse Test: Pulse Width≤300us, Duty Cycle≤2%
Min.
60
50
5
250
250
250
250
0.2
0.6
0.56
100
Max.
10
10
650
650
0.66
700
3
Units
V
V
V
nA
nA
V
V
V
MHz
pF
©2006 Fairchild Semiconductor Corporation
1
2N6428A Rev. A
www.fairchildsemi.com