2N6076_1 Datasheet, PDF (1/3 Pages) Fairchild Semiconductor – SILICON PNP SMALL SIGNAL TRANSISTOR

2N6076
SILICON PNP SMALL SIGNAL TRANSISTOR
BVCEO . . . . 25 V (Min)
hFE . . . . 100 (Min) @ VCE = 10 V, IC = 10 mA
1 23
BCE
ABSOLUTE MAXIMUM RATINGS (NOTE 1)
TEMPERATURES
Storage Temperature
-55 Degrees C to
Operating Junction Temperature
150 Degrees C
150 Degrees C
POWER DISSIPATION (NOTES 2 & 3)
Total Device Dissipation at TA = 25 Deg C
625 mW
VOLTAGES & CURRENT
VCEO
Collector to Emitter
VCBO
Collector to Base
VEBO
Emitter to Base
IC
Collector Current
25 V
25 V
5V
500 mA
DISCRETE POWER & SIGNAL
TECHNOLOGIES
1
23
0.135 - 0.145
(3.429 - 3.683)
0.175 - 0.185
(4.450 - 4.700)
LOGOXYY
2N
6076
0.175 - 0.185
(4.450 - 4.700)
SEATING
PLANE
0.500 _MIN
(12.70)
0.016 - 0.021
(0.410- 0.533)
0.045 - 0.055
(1.143- 1.397)
0.095 - 0.105
(2.413 - 2.667)
ELECTRICAL CHARACTERISTICS (25 Degrees C Ambient Temperature unless otherwise stated)
SYM
CHARACTERISTICS
MIN MAX UNITS TEST CONDITIONS
BVCBO
BVCEO
BVEBO
ICBO
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Cutoff Current
ICES
IEBO
hFE
VCE(sat)
VBE(sat)
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
25
V
25
V
5
V
100 nA
10
uA
100 nA
100
uA
100 500
0.25
V
0.8
V
IC = 100 uA
IC = 10 mA
IE = 10 uA
VCB = 25 V
VCB = 25 V , T=+100°C
VCE = 25 V
VEB = 3.0 V
VCE = 10 V IC = 10 mA
IC = 10mA IB = 1.0mA
IC = 10mA IB = 1.0mA
VBE(on) Base -Emitter On Voltage
0.5 1.2
V
VCE = 10 V IC = 10mA
©1998 Fairchild Semiconductor Corporation
2n6076.ppt6894 revA