2N5952 Datasheet, PDF (1/3 Pages) Fairchild Semiconductor – N-Channel RF Ampifier

2N5952
N-Channel RF Ampifier
• This device is designed primarily for electronic switching applications
such as low on resistance analog switching.
• Sourced from process 50.
1
TO-92
Absolute Maximum Ratings * T_C=25°C unless otherwise noted
1. Gate 2. Source 3. Drain
Symbol
Parameter
Value
Units
V_DG
Drain-Gate Voltage
30
V
V_GS
Gate-Source Voltage
-30
V
I_GF
Forward Gate Current
10
mA
T_J, T_STG
Operating and Storage Junction Temperature Range
-55 ~ +150
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics T_C=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Off Characteristics
V_(BR)GSS Gate-Source Breakdown Voltage
I_GSS
Gate Reverse Current
V_GS(off) Gate-Source Cutoff Voltage
On Characteristics
V_DS = 0, I_G = -1.0µA
V_GS = -15V, V_DS = 0
V_DS = 15V, I_D = 100nA
I_DSS
Zero-Gate Voltage Drain Current *
Small Signal Characteristics
V_DS = 15V, V_GS = 0
g_fs
Forward Transfer Conductance
g_os
Output Conductance
C_iss
Input Capacitance
C_rss
Reverse Transfer Capacitance
NF
Noise Figure
* Pulse Test: Pulse Width ≤ 300ms, Duty Cycle ≤ 1.0%
V_DS = 15V, V_GS = 0, f = 1.0kHz
V_DS = 15V, V_GS = 0, f = 100MHz
V_DS = 15V, V_GS = 0, f = 1.0MHz
V_DS = 15V, V_GS = 0, f = 1.0MHz
V_DS = 15V, R_G = 1.0kΩ,
f = 1.0kHz
Min. Typ. Max. Units
-30
V
-1.0
nA
-1.3
-3.5
V
4.0
8.0
mA
2000
6500
75
6.0
2.0
2.0
µmhos
µmhos
pF
pF
dB
Thermal Characteristics T_A=25°C unless otherwise noted
Symbol
Parameter
P_D
Total Device Dissipation
Derate above 25°C
R_θJC
R_θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max.
350
2.8
125
357
Units
mW
mW/°C
°C/W
°C/W
©2002 Fairchild Semiconductor Corporation
Rev. A1, November 2002