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| 2N5772 Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – NPN Switching Transistor | |||
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NPN Switching Transistor
⢠Sourced from process 22.
2N5772
1
TO-92
1. Emitter 2. Base 3. Collector
Absolute Maximum Ratings * Ta=25°C unless otherwise noted
Symbol
Parameter
VCEO
Collector-Emitter Voltage
VCBO
Collector-Base Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current
- Continued
TSTG
Operating and Storage Junction Temperature Range
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired
Value
15
40
5.0
300
- 55 ~ 150
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Units
V
V
V
mA
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Off Characteristics
BV(BR)CEO
BV(BR)CES
BV(BR)CBO
BV(BR)EBO
ICBO
ICES
Collector-Emitter Breakdown Voltage *
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
IEBO
Emitter Cutoff Current
On Characteristics *
IC = 10mA, IB = 0
IC = 100µA, VBE = 0
IC = 100µA, IE = 0
IE = 100µA, IC = 0
VCB = 20V, IE = 0
VCE = 20V, VBE = 0
VCE = 20V, VBE = 0, Ta = 65°C
VEB = 5.0V, IC = 0
hFE
DC Current Gain
VCE(sat)
Collector-Emitter Saturation Voltage
VBE(sat)
Base-Emitter Saturation Voltage
Small Signal Characteristics
VCE = 0.4V, IC = 30mA
VCE = 0.5V, IC = 100mA
VCE = 1.0V, IC = 300mA
IC = 30mA, IB = 3.0mA
IC = 100mA, IB = 10mA
IC = 300mA, IB = 3.0mA
IC = 30mA, IB = 3.0mA
IC = 100mA, IB = 10mA
IC = 300mA, IB = 3.0mA
Ccb
Collector-Base Capacitance
Ceb
Emitter-Base Capacitance
hfe
Small-Signal Current Gain
* Pulse Test: Pulse Width ⤠300µs, Duty Cycle ⤠2.0%
VCB = 5.0V, IE = 0, f = 1MHz
VCB = 5.0V, IC = 0, f = 1MHz
IC = 300mA, VCE = 10V, f = 100MHz
Min.
15
40
40
5.0
30
25
15
0.73
3.5
Max.
0.5
0.5
3.0
100
120
0.2
0.28
0.5
0.95
1.2
1.7
5.0
8.0
Units
V
V
V
V
µA
µA
µA
µA
V
V
V
V
V
V
pF
pF
©2004 Fairchild Semiconductor Corporation
Rev. B, October 2004
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