2N5770_01 Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – NPN RF Transistor

2N5770
Discrete POWER & Signal
Technologies
C
BE
TO-92
NPN RF Transistor
This device is designed for use as RF amplifiers, oscillators and
multipliers with collector currents in the 1.0 mA to 30 mA range.
Sourced from Process 43. See PN918 for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
V_CEO
Collector-Emitter Voltage
15
VCBO
Collector-Base Voltage
30
V_EBO
Emitter-Base Voltage
4.5
I_C
T_J, T_stg
Collector Current - Continuous
Operating and Storage Junction Temperature Range
50
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
P_D
Total Device Dissipation
Derate above 25°C
Rθ_JC
Thermal Resistance, Junction to Case
Rθ_JA
Thermal Resistance, Junction to Ambient
Max
2N5770
350
2.8
125
357
Units
V
V
V
mA
°C
Units
mW
mW/°C
°C/W
°C/W
© 1997 Fairchild Semiconductor Corporation