2N5638 Datasheet, PDF (1/3 Pages) Fairchild Semiconductor – N-Channel Switch

2N5638
N-Channel Switch
• This device is designed for low level analog switchng, sample and hold
circuits and chopper stabilized amplifiers.
• Sourced from process 51.
1
TO-92
Absolute Maximum Ratings * T_C=25°C unless otherwise noted
1. Drain 2. Source 3. Gate
Symbol
Parameter
Value
Units
V_DG
Drain-Gate Voltage
30
V
V_GS
Gate-Source Voltage
-30
V
I_GF
Forward Gate Current
50
mA
T_J, T_STG
Operating and Storage Junction Temperature Range
-55 ~ +150
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics T_C=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Min. Typ. Max. Units
Off Characteristics
V_(BR)GSS Gate-Source Breakdown Voltage
I_GSS
Gate Reverse Current
I_D(off)
Drain Cutoff Leakage Current
On Characteristics
V_DS = 0, I_G = -10µA
V_GS = -15V, V_DS = 0
V_DS = 12V, V_GS = 15V
-30
V
-1.0 nA
1.0 nA
I_DSS
Zero-Gate Voltage Drain Current *
r_DS(on)
Drain-Source On Resistance
Small Signal Characteristics
V_DS = 20V, I_GS = 0
V_GS = 0V, I_D = 1.0mA
50
mA
30
Ω
r_ds(on)
Drain-Source On Resistance
C_iss
Input Capacitance
C_rss
Reverse Transfer Capacitance
Switching Characteristics
V_DS = V_GS = 0, f = 1.0kHz
V_DS = 0, V_GS = 12V, f = 1.0MHz
V_DS = 0V, V_GS = 12V, f = 1.0MHz
30
Ω
10 pF
4.0 pF
t_d(on)
Trun On Delay Time
t_r
Rise Time
t_d(off)
Trun Off Delay Time
t_f
Fall Time
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 1.0%
V_DD = 10V, V_GS(on) = 0
V_GS(off) = -12, I_D(on) = 12mA
R_G = 50Ω
4.0 ns
5.0 ns
5.0 ns
10 ns
Thermal Characteristics T_A=25°C unless otherwise noted
Symbol
Parameter
P_D
Total Device Dissipation
Derate above 25°C
R_θJC
R_θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max.
350
2.8
125
357
Units
mW
mW/°C
°C/W
°C/W
©2002 Fairchild Semiconductor Corporation
Rev. A1, November 2002