English
Language : 

2N5306_02 Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – NPN Darlington Transistor
2N5306
NPN Darlington Transistor
• This device is designed for applications requiring extremely high
current gain at currents to 1.0A.
• Sourced from process 05.
• See MPSA14 for characteristics.
1
TO-92
Absolute Maximum Ratings * TA=25°C unless otherwise noted
1. Emitter 2. Collector 3. Base
Symbol
Parameter
Value
Units
VCEO
Collector-Emitter Voltage
25
V
VCBO
Collector-Base Voltage
25
V
VEBO
Emitter-Base Voltage
12
V
IC
Collector Current
- Continuous
1.2
A
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 ~ +150
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics TA=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Min. Typ. Max. Units
Off Characteristics
V(BR)CEO Collector-Emitter Breakdown Voltage * IC = 10mA, IB = 0
25
V(BR)CBO Collector-Base Breakdown Voltage
IC = 0.1µA, IE = 0
25
V(BR)EBO Emitter-Base Breakdown Voltage
IE = 0.1µA, IC = 0
12
ICBO
Collector Cutoff Current
VCB = 25V, IE = 0
VCB = 25V, IE = 0, Ta = 100°C
IEBO
Emitter Cutoff Current
VEB = 12V, IC = 0
On Characteristics *
V
V
V
0.1
µA
20
µA
0.1
µA
hFE
DC Current Gain
VCE(sat) Collector-Emitter Saturation Voltage
VBE(sat) Base-Emitter Saturatin Voltage
VBE(on) Base-Emitter On Voltage
Small Signal Characteristics
VCE = 5.0V, IC = 2.0mA
VCE = 5.0V, IC = 100mA
IC = 200mA, IB = 0.2mA
IC = 200mA, IB = 0.2mA
IC = 200mA, VCE = 5.0V
7,000
20,000
70,000
1.4
V
1.6
V
1.5
V
Ccb
Collector-Base Capacitance
hfe
Small-Signal Current Gain
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%
VCB = 10V, f = 1.0MHz
IC = 2.0mA, VCE = 5.0V,
f = 1.0KHz
IC = 2.0mA, VCE = 5.0V,
f = 10MHz
7000
6.0
10
pF
©2002 Fairchild Semiconductor Corporation
Rev. B1, July 2002