2N4401TFR Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – NPN General Pupose Amplifier

2N4401
MMBT4401
C
C
BE
TO-92
SOT-23
Mark: 2X
E
B
NPN General Pupose Amplifier
This device is designed for use as a medium power amplifier and
switch requiring collector currents up to 500 mA.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
V_CEO
Collector-Emitter Voltage
V_CBO
Collector-Base Voltage
V_EBO
Emitter-Base Voltage
I_C
Collector Current - Continuous
T_J, T_stg
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
40
60
6.0
600
-55 to +150
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
V
mA
°C
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
P_D
Total Device Dissipation
Derate above 25°C
Rθ_JC
Thermal Resistance, Junction to Case
Rθ_JA
Thermal Resistance, Junction to Ambient
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
Max
2N4401
625
5.0
83.3
200
*MMBT4401
350
2.8
357
Units
mW
mW /°C
°C/W
°C/W
 2001 Fairchild Semiconductor Corporation
2N4401/MMBT4401, Rev A