2N3819_02 Datasheet, PDF (1/3 Pages) Fairchild Semiconductor – N-Channel RF Amplifier

2N3819
N-Channel RF Amplifier
• This device is designed for RF amplifier and mixer applications
operating up to 450MHz, and for analog switching requiring low
capacitance.
• Sourced from process 50.
1
TO-92
1. Drain 2. Gate 3. Source
Epitaxial Silicon Transistor
Absolute Maximum Ratings* T_C=25°C unless otherwise noted
Symbol
Parameter
V_DG
Drain-Gate Voltage
V_GS
Gate-Source Voltage
I_D
Drain Current
I_GF
Forward Gate Current
T_STG
Storage Temperature Range
* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Ratings
25
-25
50
10
-55 ~ 150
NOTES:
1) These rating are based on a maximum junction temperature of 150 degrees C.
2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
mA
mA
°C
Electrical Characteristics T_C=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Off Characteristics
V_(BR)GSS Gate-Source Breakdwon Voltage
I_GSS
Gate Reverse Current
V_GS(off) Gate-Source Cutoff Voltage
V_GS
Gate-Source Voltage
On Characteristics
I_G = 1.0µA, V_DS = 0
V_GS = -15V, V_DS = 0
V_DS = 15V, I_D = 2.0nA
V_DS = 15V, I_D = 200µA
I_DSS
Zero-Gate Voltage Drain Current
Small Signal Characteristics
V_DS = 15V, V_GS = 0
gfs
goss
y_fs
C_iss
C_rss
Forward Transfer Conductance
Output Conductance
Forward Transfer Admittance
Input Capacitance
Reverse Transfer Capacitance
V_DS = 15V, V_GS = 0, f = 1.0KHz
V_DS= 15V, V_GS = 0, f = 1.0KHz
V_DS= 15V, V_GS = 0, f = 1.0KHz
V_DS = 15V, V_GS = 0, f = 1.0KHz
V_DS = 15V, V_GS = 0, f = 1.0KHz
Min.
25
-0.5
2.0
2000
1600
Typ.
Max. Units
V
2.0
nA
8.0
V
-7.5
V
20
mA
6500
50
8.0
4.0
µmhos
µmhos
µmhos
pF
pF
Thermal Characteristics T_A=25°C unless otherwise noted
Symbol
Parameter
P_D
Total Device Dissipation
Derate above 25°C
R_θJC
Thermal Resistance, Junction to Case
R_θJA
Thermal Resistance, Junction to Ambient
* Device mounted on FR-4 PCB 1.5” × 1.6” × 0.06”
Max.
350
2.8
125
357
Units
mW
mW/°C
°C/W
°C/W
©2002 Fairchild Semiconductor Corporation
Rev. A1, December 2002