2N3704_02 Datasheet, PDF (1/3 Pages) Fairchild Semiconductor – NPN General Purpose Amplifier

2N3704
NPN General Purpose Amplifier
• This device designed for use as general purpose amplifier and
switches requiring collector currents to 300mA.
• Sourced from Process 10.
• See PN100 for characteristics.
NPN Epitaxial Silicon Transistor
1
TO-92
1. Emitter 2. Collector 3. Base
Absolute Maximum Ratings* T_a=25°C unless otherwise noted
Symbol
Parameter
V_CEO
Collector-Emitter Voltage
V_CBO
Collector-Base Voltage
V_EBO
Emitter-Base Voltage
I_C
Collector Current
- Continuous
T_J, T_ST
Operating and Storage Junction Temperature Range
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Value
30
50
5.0
500
-55 ~ +150
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
V
mA
°C
Electrical Characteristics T_a=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Off Characteristics
BV_(BR)CEO Collector-Emitter Breakdown Voltage
BV_(BR)CBO Collector-Base Breakdown Voltage
BV_(BR)EBO Emitter-Base Breakdown Voltage
I_CBO
Collector Cut-off Current
I_EBO
Emitter Cut-off Current
On Characteristics *
I_C = 10mA, I_B = 0
I_C = 100µA, I_E = 0
I_E = 100µA, I_C = 0
V_CB = 20V, I_E = 0
V_EB = 3.0V, I_C = 0
h_FE
DC Current Gain
V_CE(sat) Collector-Emitter Saturation Voltage
V_BE(on)
Collector-Emitter On Voltage
Small Signal Characteristics
V_CE= 5.0V, I_C = 50mA
I_C= 100mA, I_B = 5.0mA
V_CE= 2.0V, I_C = 100mA
C_ob
Current Gain Bandwidth Product
f_T
Output Capacitance
* Pulse Test: Pulse ≤ 300µs, Duty Cycle ≤ 2.0%
V_CB = 10V, f = 1.0MHz
I_C = 50mA, V_CE = 2.0V
Min. Typ. Max. Units
30
V
50
V
5.0
V
100 nA
100 nA
100
300
0.5
1.0
V
0.6
V
12
pF
100
MHz
Thermal Characteristics T_A=25°C unless otherwise noted
Symbol
Parameter
P_D
Total Device Dissipation
Derate above 25°C
R_θJC
R_θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max.
625
5.0
83.3
200
Units
mW
mW/°C
°C/W
°C/W
©2002 Fairchild Semiconductor Corporation
Rev. B, July 2002