2N3702_02 Datasheet, PDF (1/3 Pages) Fairchild Semiconductor – PNP General Purpose Amplifier

2N3702
PNP General Purpose Amplifier
• This device designed for use as general purpose amplifier and
switches requiring collector currents to 300mA.
• Sourced from Process 68.
• See PN200 for Characteristics.
1
TO-92
1. Emitter 2. Collector 3. Base
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings* T_a=25°C unless otherwise noted
Symbol
Parameter
V_CEO
Collector-Emitter Voltage
V_CBO
Collector-Base Voltage
V_EBO
Emitter-Base Voltage
I_C
Collector Current
- Continuous
T_J, T_ST
Operating and Storage Junction Temperature Range
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Value
-25
-40
-5.0
-500
-55 ~ +150
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
V
mA
°C
Electrical Characteristics T_a=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Off Characteristics
BV_(BR)CEO Collector-Emitter Breakdown Voltage
BV_(BR)CBO Collector-Base Breakdown Voltage
BV_(BR)EBO Emitter-Base Breakdown Voltage
I_CBO
Collector Cut-off Current
I_EBO
Emitter Cut-off Current
On Characteristics *
I_C = -10mA, I_B = 0
I_C = -100µA, I_E = 0
I_E = -100µA, I_C = 0
V_CB = -20V, I_E = 0
V_EB = -3.0V, I_C = 0
h_FE
DC Current Gain
V_CE(sat) Collector-Emitter Saturation Voltage
V_BE(sat) Base-Emitter Saturation Voltage
Small Signal Characteristics
V_CE= -5.0V, I_C = -50mA
I_C = -50mA, I_B = -5.0mA
V_CE= -5.0V, I_C = -50mA
C_ob
Current Gain Bandwidth Product
f_T
Output Capacitance
* Pulse Test: Pulse ≤ 300µs, Duty Cycle ≤ 2.0%
V_CB = -10V, f = 1.0MHz
I_E = -50mA, V_CE = -5.0V
Min. Typ. Max. Units
-25
V
-40
V
-5.0
V
-100 nA
-100 nA
60
300
-0.25 V
-0.6
-1.0
V
12
pF
100
MHz
Thermal Characteristics T_A=25°C unless otherwise noted
Symbol
Parameter
P_D
Total Device Dissipation
Derate above 25°C
R_θJC
R_θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max.
625
5.0
83.3
200
Units
mW
mW/°C
°C/W
°C/W
©2002 Fairchild Semiconductor Corporation
Rev. B, July 2002