1N6266 Datasheet, PDF (1/7 Pages) QT Optoelectronics – GAAS INFRARED EMITTING DIODE

1N6266
GaAs INFRARED EMITTING DIODE
PACKAGE DIMENSIONS
0.209 (5.31)
0.184 (4.67)
0.030 (0.76)
NOM
0.255 (6.48)
1.00 (25.4)
MIN
ANODE
(CASE)
0.100 (2.54)
0.050 (1.27)
0.040 (1.02)
0.040 (1.02)
NOTES:
13
45°
Ø0.020 (0.51) 2X
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of ± .010 (.25) on all non-nominal dimensions
unless otherwise specified.
FEATURES
• Good optical to mechanical alignment
• Mechanically and wavelength matched to the
TO-18 series phototransistor
• Hermetically sealed package
• High irradiance level
• (*) Indicates JEDEC registered values
DESCRIPTION
• The 1N6266 is a 940 nm LED in a
narrow angle, TO-46 package.
SCHEMATIC
ANODE
3
(Connected
To Case)
CATHODE
1
1. Derate power dissipation linearly 1.70 mW/°C above 25°C ambient.
2. Derate power dissipation linearly 13.0 mW/°C above 25°C case.
3. RMA flux is recommended.
4. Methanol or isopropyl alcohols are recommended as cleaning
agents.
5. Soldering iron tip 1/16” (1.6mm) minimum from housing.
6. As long as leads are not under any stress or spring tension
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
Parameter
Symbol
Rating
Unit
Operating Temperature
*Storage Temperature
*Soldering Temperature (Iron)^{(3,4,5 and 6)}
*Soldering Temperature (Flow)^{(3,4 and 6)}
*Continuous Forward Current
*Forward Current (pw, 1µs; 200Hz)
*Reverse Voltage
*Power Dissipation (T_A = 25°C)⁽¹⁾
Power Dissipation (T_C = 25°C)⁽²⁾
T_OPR
-65 to +125
°C
T_STG
-65 to +150
°C
T_SOL-I
240 for 5 sec
°C
T_SOL-F
260 for 10 sec
°C
I_F
100
mA
I_F
10
A
V_R
3
V
P_D
170
mW
P_D
1.3
W
ELECTRICAL / OPTICAL CHARACTERISTICS (TA =25°C) (All measurements made under pulse conditions)
PARAMETER
*Peak Emission Wavelength
Emission Angle at 1/2 Power
Forward Voltage
*Reverse Leakage Current
*Radiant Intensity
Rise Time 0-90% of output
Fall Time 100-10% of output
TEST CONDITIONS
I_F = 100 mA
I_F = 100 mA
V_R = 3 V
I_F = 100 mA
SYMBOL
MIN
DP
935
0
—
VF
—
I_R
—
Ie
25
tr
—
tf
—
TYP
MAX
—
955
±10
—
—
1.7
—
10
—
—
1.0
—
1.0
—
UNITS
nm
Deg.
V
µA
mW/sr
µs
µs
 2001 Fairchild Semiconductor Corporation
DS300278 3/12/01
1 OF 7
www.fairchildsemi.com