1N6265 Datasheet, PDF (1/3 Pages) QT Optoelectronics – GAAS INFRARED EMITTING DIODE

1N6265
GaAs INFRARED EMITTING DIODE
PACKAGE DIMENSIONS
0.209 (5.31)
0.184 (4.67)
0.030 (0.76)
NOM
1.00 (25.4)
MIN
0.155 (3.94)
MAX
ANODE
(CASE)
0.100 (2.54)
0.050 (1.27)
0.040 (1.02)
0.040 (1.02)
NOTES:
13
45°
Ø0.020 (0.51) 2X
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of ± .010 (.25) on all non-nominal dimensions
unless otherwise specified.
FEATURES
• Good optical to mechanical alignment
• Mechanically and wavelength matched to the
TO-18 series phototransistor
• Hermetically sealed package
• High irradiance level
• (*) Indicates JEDEC registered values
SCHEMATIC
DESCRIPTION
• The 1N6265 is a 940 nm LED in a
narrow angle, TO-46 package.
ANODE
3
(Connected
To Case)
CATHODE
1
1. Derate power dissipation linearly 1.70 mW/°C above 25°C ambient.
2. Derate power dissipation linearly 13.0 mW/°C above 25°C case.
3. RMA flux is recommended.
4. Methanol or isopropyl alcohols are recommended as cleaning
agents.
5. Soldering iron tip 1/16” (1.6mm) minimum from housing.
6. As long as leads are not under any stress or spring tension
7. Total power output, P_O, is the total power radiated by the device into
a solid angle of 2 H steradians.
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
Parameter
Operating Temperature
*Storage Temperature
*Soldering Temperature (Iron)^{(3,4,5 and 6)}
*Soldering Temperature (Flow)^{(3,4 and 6)}
*Continuous Forward Current
*Forward Current (pw, 1µs; 200Hz)
*Reverse Voltage
*Power Dissipation (T_A = 25°C)⁽¹⁾
Power Dissipation (T_C = 25°C)⁽²⁾
Symbol
T_OPR
T_STG
T_SOL-I
T_SOL-F
I_F
I_F
V_R
P_D
P_D
Rating
-65 to +125
-65 to +150
240 for 5 sec
260 for 10 sec
100
10
3
170
1.3
Unit
°C
°C
°C
°C
mA
A
V
mW
W
ELECTRICAL / OPTICAL CHARACTERISTICS (TA =25°C) (All measurements made under pulse conditions)
PARAMETER
*Peak Emission Wavelength
Emission Angle at 1/2 Power
*Forward Voltage
*Reverse Leakage Current
*Total Power
Rise Time 0-90% of output
Fall Time 100-10% of output
TEST CONDITIONS
I_F = 100 mA
I_F = 100 mA
V_R = 3 V
I_F = 100 mA
SYMBOL
MIN
D_PE
935
0
—
V_F
—
I_R
—
P_O
6
t_r
—
t_f
—
TYP
MAX
—
955
±40
—
—
1.7
—
10
—
—
1.0
—
1.0
—
UNITS
nm
Deg.
V
µA
mW
µs
µs
 2001 Fairchild Semiconductor Corporation
DS300277 3/6/01
1 OF 3
www.fairchildsemi.com