1N6264 Datasheet, PDF (1/3 Pages) QT Optoelectronics – GAAS INFRARED EMITTING DIODE

1N6264
GaAs INFRARED EMITTING DIODE
PACKAGE DIMENSIONS
0.209 (5.31)
0.184 (4.67)
0.030 (0.76)
NOM
0.255 (6.48)
FEATURES
• Good optical to mechanical alignment
• Mechanically and wavelength matched to the
TO-18 series phototransistor
• Hermetically sealed package
• High irradiance level
• (*) Indicates JEDEC registered values
1.00 (25.4)
MIN
ANODE
(CASE)
0.100 (2.54)
0.050 (1.27)
0.040 (1.02)
0.040 (1.02)
NOTES:
13
45°
Ø0.020 (0.51) 2X
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of ± .010 (.25) on all non-nominal dimensions
unless otherwise specified.
DESCRIPTION
• The 1N6264 is a 940 nm LED in a
narrow angle, TO-46 package.
SCHEMATIC
ANODE
3
(Connected
To Case)
CATHODE
1
1. Derate power dissipation linearly 1.70 mW/°C above 25°C ambient.
2. Derate power dissipation linearly 13.0 mW/°C above 25°C case.
3. RMA flux is recommended.
4. Methanol or isopropyl alcohols are recommended as cleaning
agents.
5. Soldering iron tip 1/16” (1.6mm) minimum from housing.
6. As long as leads are not under any stress or spring tension
7. Total power output, P_O, is the total power radiated by the device into
a solid angle of 2 H steradians.
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
Parameter
* Operating Temperature
* Storage Temperature
* Soldering Temperature (Iron)^{(3,4,5 and 6)}
* Soldering Temperature (Flow)^{(3,4 and 6)}
* Continuous Forward Current
* Forward Current (pw, 1µs; 200Hz)
* Reverse Voltage
* Power Dissipation (T_A = 25°C)⁽¹⁾
Power Dissipation (T_C = 25°C)⁽²⁾
Symbol
T_OPR
T_STG
T_SOL-I
T_SOL-F
I_F
I_F
V_R
P_D
P_D
Rating
-65 to +125
-65 to +150
240 for 5 sec
260 for 10 sec
100
10
3
170
1.3
Unit
°C
°C
°C
°C
mA
A
V
mW
W
ELECTRICAL / OPTICAL CHARACTERISTICS (TA =25°C) (All measurements made under pulse conditions)
PARAMETER
* Peak Emission Wavelength
Emission Angle at 1/2 Power
* Forward Voltage
* Reverse Leakage Current
* Total Power
Rise Time 0-90% of output
Fall Time 100-10% of output
TEST CONDITIONS
I_F = 100 mA
I_F = 100 mA
I_F = 100 mA
V_R = 3 V
I_F = 100 mA
SYMBOL
MIN
D_P
935
0
—
V_F1
—
I_R
—
P_O
6
t_r
—
t_f
—
TYP
MAX
—
955
±8
—
—
1.7
—
10
—
—
1.0
—
1.0
—
UNITS
nm
Deg.
V
µA
mW
µs
µs
 2001 Fairchild Semiconductor Corporation
DS300276 3/2/01
1 OF 3
www.fairchildsemi.com