1N5817_07 Datasheet, PDF (1/3 Pages) Diotec Semiconductor – Schottky Barrier Rectifiers

1N5817 - 1N5819
Schottky Barrier Rectifier
• 1.0 A operation at TA = 90°C with no thermal runaway.
• For use in low voltage, high frequency inverters free wheeling, and polarity protection applications.
August 2007
DO-41 Glass case
COLOR BAND DENOTES CATHODE
Absolute Maximum Ratings T_C=25°C unless otherwise noted
Symbol
V_RRM
I_F(AV)
I_FSM
T_J, T_STG
Parameter
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
.375” lead length @ T_A = 90°C
Non-repetitive Peak Surge Current
8.3 ms Single Half-Sine Wave
Operating Junction and Storage Temperature
1N5817
20
Value
1N5818
30
1.0
1N5819
40
25
-65 to +125
Units
V
A
A
°C
Thermal Characteristics
Symbol
Parameter
P_D
Power Dissipation
R_θJA
Maximum Thermal Resistance, Junction to Ambient
R_θJC
Maximum Thermal Resistance, Junction to Case
* Mounted on Cu-pad Size 5mm x 5mm on PCB
Value
1.25
100
45
Units
W
°C/W
°C/W
Electrical Characteristics (per diode)
Symbol
Parameter
V_F
Forward Voltage
I_R
Reverse Current @ rated V_R
C_T
Total Capacitance
V_R = 4.0 V, f = 1.0 MHz
* Pulse Test: Pulse Width=300μs, Duty Cycle=2%
@ 1.0 A
@ 3.0 A
T_C = 25 °C
T_C = 100 °C
1N5817
450
750
Value
1N5818
550
875
0.5
10
110
1N5819
600
900
Units
mV
mA
pF
© 2007 Fairchild Semiconductor Corporation
1N5817 - 1N5819 Rev. 1.0.0
1
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