1N5226B Datasheet, PDF (1/3 Pages) Fairchild Semiconductor – Absolute Maximum Ratings

1N5226B - 1N5257B Series Half Watt Zeners
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Parameter
Value
Units
Storage Temperature Range
Maximum Junction Operating Temperature
Lead Temperature (1/16” from case for 10 seconds)
Total Device Dissipation
Derate above 75°C
Surge Power**
-65 to +200
+ 200
+ 230
500
4.0
10
°C
°C
°C
mW
mW/°C
W
*These ratings are limiting values above which the serviceability of the diode may be impaired.
**Non-recurrent square wave PW= 8.3 ms, TA= 55 degrees C.
NOTES:
1) These ratings are based on a maximum junction temperature of 200 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed
or low duty cycle operations.
Tolerance: B = 5%
DO-35
Electrical Characteristics TA = 25°C unless otherwise noted
Device
V_Z
(V)
Z_{Z @} I_ZT
(Ω)
(mA)
Z_{ZK @} I_ZK
(Ω)
(mA)
1N5226B
3.3
28
20
1,600
0.25
1N5227B
3.6
24
20
1,700
0.25
1N5228B
3.9
23
20
1,900
0.25
1N5229B
4.3
22
20
2,000
0.25
1N5230B
1N5231B
1N5232B
1N5233B
4.7
19
5.1
17
5.6
11
6.0
7.0
20
1,900
0.25
20
1,600
0.25
20
1,600
0.25
20
1,600
0.25
1N5234B
1N5235B
1N5236B
1N5237B
1N5238B
6.2
7.0
6.8
5.0
7.5
6.0
8.2
8.0
8.7
8.0
20
1,000
0.25
20
750
0.25
20
500
0.25
20
500
0.25
20
600
0.25
1N5239B
9.1
10
20
600
0.25
1N5240B
10
17
20
600
0.25
1N5241B
11
22
20
600
0.25
1N5242B
12
30
20
600
0.25
V_F Foward Voltage = 1.1 V Maximum @ IF = 200 mA for all 1N5200 series
NOTE: National preferred devices in BOLD
V_{R @} I_R
(V)
(µA)
1.0
25
1.0
15
1.0
10
1.0
5.0
2.0
5.0
2.0
5.0
3.0
5.0
3.5
5.0
4.0
5.0
5.0
3.0
6.0
3.0
6.5
3.0
6.5
3.0
7.0
3.0
8.0
3.0
8.4
2.0
9.1
1.0
T_C
(%/°C)
- 0.07
- 0.065
- 0.06
+/- 0.055
+/- 0.03
+/- 0.3
0.038
0.038
0.045
0.05
0.058
0.062
0.065
0.068
0.075
0.076
0.077
©1997 Fairchild Semiconductor Corporation
1N5200B Rev. A