1N483B Datasheet, PDF (1/2 Pages) Compensated Deuices Incorporated – GENERAL PURPOSE SILICON DIODES

1N483B
Small Signal Diode
January 2005
DO-35
Color Band Denotes Cathode
Absolute Maximum Ratings * T_a = 25°C unless otherwise noted
Symbol
Parameter
Value
V_RRM
Maximum Repetitive Reverse Voltage
80
I_F(AV)
Average Rectified Forward Current
200
I_FSM
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
1.0
Pulse Width = 1.0 microsecond
4.0
T_STG
T_J
Storage Temperature Range
Operating Junction Temperature
* These ratings are limiting values above which the serviceability of the diode may be impaired.
-65 to +200
175
NOTES:
1) These ratings are based on a maximum junction temperature of 200 degrees C.
2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P_D
R_θJA
Parameter
Power Dissipation
Thermal Resistance, Junction to Ambient
Value
500
300
Electrical Characteristics T_C = 25°C unless otherwise noted
Symbol
Parameter
Conditions
V_R
Breakdown Voltage
V_F
Forward Voltage
I_R
Reverse Leakage
I_R = 100µA
I_F = 100mA
V_R = 60V
V_R = 60V, T_A = 150°C
Min.
80
Unit
V
mA
A
A
°C
°C
Unit
mW
°C/W
Max
1.0
25
5
Units
V
V
nA
µA
©2005 Fairchild Semiconductor Corporation
1
1N483B Rev. A
www.fairchildsemi.com