1N457 Datasheet, PDF (1/2 Pages) Fairchild Semiconductor – Small Signal Diode

1N457/A
Small Signal Diode
DO-35
Color Band Denotes Cathode
Absolute Maximum Ratings* T = 25°C unless otherwise noted
A
Symbol
Parameter
V_RRM
I_F(AV)
I_FSM
T_stg
T_J
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond
Storage Temperature Range
Operating Junction Temperature
Value
70
200
1.0
4.0
-65 to +200
175
Units
V
mA
A
A
°C
°C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 200 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P_D
R_θJA
Parameter
Power Dissipation
Thermal Resistance, Junction to Ambient
Value
500
300
Units
mW
°C/W
Electrical Characteristics T_A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
V_R
Breakdown Voltage
I_R = 100 µA
V_F
Forward Voltage
1N457
I_F = 20 mA
1N457A I_F = 100 mA
I_R
Reverse Current
V_R = 60 V
V_R = 60 V, T_A = 150°C
C_T
Total Capacitance
1N457 V_R = 0, f = 1.0 MHz
Min
70
Max
1.0
1.0
25
5
8.0
Units
V
V
V
nA
µA
pF
2002 Fairchild Semiconductor Corporation
1N457/A, Rev. A