1N4154_09 Datasheet, PDF (1/3 Pages) Fairchild Semiconductor – High Conductance Fast Diode

1N4154
High Conductance Fast Diode
July 2009
Features
• 500 milliwatt Power Dissipation package.
• Fast Switching Speed.
• Typical capacitance less than 1.0 picofarad.
General Description
The high breakdown voltage, fast switching speed and
high forward conductance of this diode packaged in a
DO-35 miniature Glass Axial leaded package makes it
desirable also as a general purpose diode.
DO-35
Color Band Denotes Cathode
Absolute Maximum Ratings * T_A = 25°C unless otherwise noted
Symbol
Parameter
Value
Unit
W_IV
I_O
I_F
i_f
i_F(surge)
Working Inverse Voltage
Average Rectified Current
DC Forward Current (I_F)
Recurrent Peak Forward Current (I_F)
Peak Forward Surge Current (I_FSM)
Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond
35
V
100
mA
300
mA
400
mA
1.0
A
4.0
A
T_STG
Storage Temperature Range
-65 to +200
°C
T_J
Operating Junction Temperature
175
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
Symbol
P_D
R_θJA
Parameter
Total Power Dissipation at T_A = 25°C
Linear Derating Factor from T_A = 25°C
Thermal Resistance, Junction to Ambient
Value
500
3.33
300
Unit
mW
mW/°C
°C/W
© 2009 Fairchild Semiconductor Corporation
1N4154 Rev. B0
1
www.fairchildsemi.com