1N4154 Datasheet, PDF (1/5 Pages) Vishay Siliconix – Silicon Epitaxial Planar Diode

1N4154
DISCRETE POWER AND SIGNAL
TECHNOLOGIES
General Description:
Features:
The high breakdown voltage, fast switching speed and high • 500 milliwatt Power Dissipation package.
forward conductance of this diode packaged in a DO-35
miniature Glass Axial leaded package makes it desirable also
• Fast Switching Speed,
as a general purpose diode.
• Typical capacitance less than 1.0 picofarad.
High Conductance
Ordering:
Fast Diode
• 13 inch reel, 50 mm (T50R) & 26 mm (T26R) Tape;
10,000 units per reel.
Absolute Maximum Ratings* TA = 25^OC unless otherwise noted
Sym
Parameter
Value
Units
T_stg
T_J
P_D
R_OJA
W_iv
I_O
I_F
i_f
i_F(surge)
Storage Temperature
Operating Junction Temperature
Total Power Dissipation at T_A = 25^OC
Linear Derating Factor from T_A = 25^OC
Thermal Resistance Junction-to-Ambient
Working Inverse Voltage
Average Rectified Current
DC Forward Current (IF)
Recurrent Peak Forward Current (IF)
Peak Forward Surge Current (IFSM) Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond
-65 to +200
175
500
3.33
300
35
100
300
400
1.0
4.0
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired
CATHODE
BAND
O_C
O_C
mW
mW/^OC
O_C/W
V
mA
mA
mA
Amp
Amp
0.500 Minimum
12.70 Typ 1.000
MARKING
LOGO
1N
41
54
0.200 (5.08)
0.120 (3.05)
0.022 (0.558) Diameter
0.018 (0.458) Typ 20 mils
0.090 (2.28) Diameter
0.060 (1.53)
Electrical Characteristics TA = 25^OC unless otherwise noted
SYM
B_V
I_R
CHARACTERISTICS
Breakdown Voltage
Reverse Leakage
V_F Forward Voltage
C_T Capacitance
T_RR Reverse Recovery Time
© 1997 Fairchild Semiconductor Corporation
MIN
35
MAX
100
100
1.0
4.0
4.0
UNITS
V
nA
uA
V
pF
ns
TEST CONDITIONS
I_R = 5.0 uA
V_R = 25 V
V_R = 25 V, T_A = 150^OC
I_F = 30 mA
V_R = 0.0 V, f = 1.0 MHz
I_F = 10 mA V_R = 6.0 V
I_RR = 1.0 mA, R_L = 100 ohms
Revision A - September 21, 1998