1N4152 Datasheet, PDF (1/2 Pages) Fairchild Semiconductor – Small Signal Diode

1N4152
Small Signal Diode
DO-35
Color Band Denotes Cathode
Absolute Maximum Ratings* T = 25°C unless otherwise noted
A
Symbol
Parameter
Value
V_RRM
Maximum Repetitive Reverse Voltage
40
I_F(AV)
Average Rectified Forward Current
200
I_FSM
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
1.0
Pulse Width = 1.0 microsecond
4.0
T_stg
Storage Temperature Range
T_J
Operating Junction Temperature
-65 to +200
175
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 200 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P_D
R_θJA
Parameter
Power Dissipation
Thermal Resistance, Junction to Ambient
Value
500
300
Units
V
mA
A
A
°C
°C
Units
mW
°C/W
Electrical Characteristics T_A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
V_R
Breakdown Voltage
V_F
Forward Voltage
I_R
Reverse Current
C_T
Total Capacitance
t_rr1
Reverse Recovery Time
t_rr2
Reverse Recovery Time
I_R = 5.0 µA
I_F = 0.1 mA
I_F = 0.25 mA
I_F = 1.0 mA
I_F = 2.0 mA
I_F = 10 mA
I_F = 20 mA
V_R = 30 V
V_R = 30 V, T_A = 150°C
V_R = 0, f = 1.0 MHz
I_F = I_R = 10 mA, R_L = 100 Ω
I_rr = 1.0 mA
I_F = 10 mA, V_R = 6.0 V,
R_L = 100 Ω I_rr = 1.0 mA
2002 Fairchild Semiconductor Corporation
Min
40
0.49
0.53
0.59
0.62
0.70
0.74
Max
0.55
0.59
0.67
0.70
0.81
0.88
50
50
2
4
Units
V
V
V
V
V
V
V
nA
µA
pF
ns
2
ns
1N4152, Rev. A