1N4151 Datasheet, PDF (1/2 Pages) NXP Semiconductors – High-speed diodes

1N4151
DO-35
Color Band Denotes Cathode
Small Signal Diode
Absolute Maximum Ratings* T = 25°C unless otherwise noted
A
Symbol
Parameter
Value
V_RRM
Maximum Repetitive Reverse Voltage
75
I_F(AV)
Average Rectified Forward Current
150
I_FSM
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond
T_stg
Storage Temperature Range
T_J
Operating Junction Temperature
0.5
2.0
-65 to +175
175
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 200 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
mA
A
A
°C
°C
Thermal Characteristics
Symbol
P_D
R_θJA
Parameter
Power Dissipation
Thermal Resistance, Junction to Ambient
Value
500
300
Units
mW
°C/W
Electrical Characteristics T = 25°C unless otherwise noted
A
Symbol
Parameter
Test Conditions
V_R
Breakdown Voltage
V_F*
Forward Voltage
I_R*
Reverse Current
C_T
Total Capacitance
t_rr1
Reverse Recovery Time
t_rr2
Reverse Recovery Time
*Pulse test : Pulse width=300us, Duty Cycle=2%
I_R = 5.0 µA
I_F = 50 mA
V_R = 50 V
V_R = 50 V, T_A = 150°C
V_R = 0 V , f = 1.0 MHz
I_F = I_R = 10 mA, I_RR = 1.0 mA,
R_L = 100Ω
I_F = 10 mA, V_R = 6.0 V,
R_L = 100Ω
2004 Fairchild Semiconductor Corporation
Min
75
Max
1.0
50
50
2.0
4.0
Units
V
V
nA
µA
pF
ns
2.0
ns
1N4151, Rev. A