1N4150 Datasheet, PDF (1/3 Pages) NXP Semiconductors – High-speed diodes"

Discrete POWER & Signal
Technologies
1N4150 / FDLL4150
DO-35
LL-34
THE PLACEMENT OF THE EXPANSION GAP
HAS NO RELATIONSHIP TO THE LOCATION
OF THE CATHODE TERMINAL
COLOR BAND MARKING
DEVICE 1ST BAND 2ND BAND
FDLL4150 BLACK
ORANGE
High Conductance Ultra Fast Diode
Sourced from Process 1R. See MMBD1201-1205 for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
W _IV
I_O
I_F
i_f
i_f(surge)
T_stg
T_J
Working Inverse Voltage
Average Rectified Current
DC Forward Current
Recurrent Peak Forward Current
Peak Forward Surge Current
Pulse width = 1.0 second
Pulse width = 1.0 microsecond
Storage Temperature Range
Operating Junction Temperature
50
200
400
600
1.0
4.0
-65 to +200
175
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 200 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
mA
mA
mA
A
A
°C
°C
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
P_D
Total Device Dissipation
Derate above 25°C
Rθ_JA
Thermal Resistance, Junction to Ambient
Max
1N / FDLL 4150
500
3.33
300
Units
mW
mW /°C
°C/W
ã 1997 Fairchild Semiconductor Corporation