1N4148WS_12 Datasheet, PDF (1/4 Pages) Diodes Incorporated – SURFACE MOUNT FAST SWITCHING DIODE

April 2012
1N4148WS / 1N4448WS / 1N914BWS
Small Signal Diodes
Features
• General Purpose Diodes
• Fast Switching Device (T_RR < 4.0ns)
• Very Small and Thin SMD Package
• Moisture Level Sensitivity 1
• Pb-free Version and RoHS Compliant
• Matte Tin (Sn) Lead Finish
• Green Mold Compound
Device Marking Code
Device Type Device Marking
1N4148WS
S1
1N4448WS
S2
1N914BWS
S3
1. Cathode
2. Anode
ELECTRICAL SYMBOL
2
1
SOD-323 Flat Lead
Band Indicates Cathode
Absolute Maximum Ratings* T_a = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
V_RSM
V_RRM
I_FRM
I_O
T_J
T_STG
Non-Repetitive Peak Reverse Voltage
Repetitive Peak Reverse Voltage
Repetitive Peak Forward Current
Continuous Forward Current
Operating Junction Temperature
Storage Temperature Range
100
V
75
V
300
mA
150
mA
+150
°C
-55 to +150
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
Parameter
P_D
R_θJA
Power Dissipation (T_C = 25°C)
Thermal Resistance, Junction to Ambient *
* Device mounted on FR-4 PCB minimum land pad.
Value
200
500
Units
mW
°C/W
Electrical Characteristics T_a = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
BV_R
Breakdown Voltage
I_R = 100 μA
I_R = 5 μA
I_R
Reverse Current
V_R = 20 V
V_R = 75 V
V_F
Forward Voltage 1N4448WS/914BWS I_F = 5 mA
1N4148WS
I_F = 10 mA
1N4448WS/914BWS I_F = 100 mA
C_O
Diode Capacitance
V_R = 0, f = 1 MHz
T_RR
Reverse Recovery Time
I_F = 10 mA, I_R = 60 mA,
I_RR = 1 mA, R_L = 100 Ω
Min.
100
75
0.62
Typ.
Max.
25
5
0.72
1
1
4
4
Units
V
V
nA
μA
V
V
V
pF
ns
© 2012 Fairchild Semiconductor Corporation
1N4148WS / 1N4448WS / 1N914BWS Rev. B0
1
www.fairchildsemi.com