1N4148WS Datasheet, PDF (1/6 Pages) Pan Jit International Inc. – SURFACE MOUNT SWITCHING DIODES

1N4148WS / 1N4448WS / 1N914BWS
Small Signal Diodes
• General Purpose Diodes
• Fast switching Device( TRR < 4.0 ns )
• Very Small and Thin SMD package
• Moisture Level Sensitivity 1
• Pb-free Version and RoHS Compliant
• Matte Tin (Sn) Lead Finish
• Green Mold Compound
Device Marking Code
Device Type Device Marking
1N4148WS
S1
1N4448WS
S2
1N914BWS
S3
March 2008
*Band Denotes Cathode _SOD-323F
Absolute Maximum Ratings* T_a=25°C unless otherwise noted
Symbol
V_RSM
V_RRM
I _FRM
I_O
T_J
T_STG
Parameter
Non-Repetitive Peak Reverse Voltage
Repetitive Peak Reverse Voltage
Repetitive Peak Forward Current
Continuous Forward Current
Operating Junction Temperature Range
Storage Temperature Range
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
Parameter
R_θJA
Thermal Resistance, Junction to Ambient
P_D
Power Dissipation(T_C=25°C)
* Device mounted on FR-4 PCB minimum land pad.
Electrical Characteristics T_a=25°C unless otherwise noted
Symbol
Parameter
Test Conditions
BV_R
Breakdown Voltage
I_R = 100 μA
I_R = 5 μA
I_R
Reverse Current
V_R = 20 V
V_R = 75 V
1N4448WS/ 914BWS I_F = 5 mA
V_F
Forward Voltage
1N4148WS
I_F = 10 mA
1N4448WS/ 914BWS I_F = 100 mA
C_O
Diode Capacitance
V_R = 0, f = 1 MHz
T_RR
Reverse Recovery Time
I _F = 10 mA, I_R = 60mA
I _RR = 1 mA, R_L = 100 Ω
Value
100
75
300
150
+150
-55 to +150
Units
V
V
mA
mA
°C
°C
Value
500
200
Unit
°C/W
mW
Min Typ Max Units
100
75
V
25
nA
5
μA
0.62
0.72
1
V
1
4
pF
4
nS
© 2007 Fairchild Semiconductor Corporation
1N4148WS / 1N4448WS / 1N914BWS Rev. 1.0
1
www.fairchildsemi.com