163478 Datasheet, PDF (1/3 Pages) Fairchild Semiconductor – NPN Darlington Transistor

MPSA12
NPN Darlington Transistor
• This device is designed for applications requiring extremely high
current gain at currents to 1.0A.
• Sourced from process 05.
• See MPSA14 for characteristics.
1
TO-92
Absolute Maximum Ratings * T_A=25°C unless otherwise noted
1. Emitter 2. Base 3. Collector
Symbol
Parameter
Value
Units
V_CES
Collector-Emitter Voltage
20
V
V_CBO
Collector-Base Voltage
20
V
V_EBO
Emitter-Base Voltage
10
V
I_C
Collector Current
- Continuous
1.2
A
T_J, T_STG
Operating and Storage Junction Temperature Range
-55 ~ +150
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics T_A=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Off Characteristics
V_(BR)CES Collector-Emitter Breakdown Voltage
I_CBO
Collector Cutoff Current
I_CES
Emitter Cutoff Current
I_EBO
Emitter Cutoff Current
On Characteristics *
I_C = 100µA, I_E = 0
V_CB = 15V, I_E = 0
V_CB = 15V, I_C = 0
V_EB = 10V, I_C = 0
h_FE
DC Current Gain
V_CE(sat) Collector-Emitter Saturation Voltage
V_BE(on) Base-Emitter On Voltage
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%
V_CE = 5.0V, I_C = 10mA
I_C = 10mA, I_B = 0.01mA
I_C = 10mA, V_CE = 5.0V
Min. Typ. Max. Units
20
V
100 nA
100 nA
100 nA
20,000
1.0
V
1.4
V
Thermal Characteristics T_A=25°C unless otherwise noted
Symbol
Parameter
P_D
Total Device Dissipation
Derate above 25°C
R_θJC
R_θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max.
625
5.0
83.3
200
Units
mW
mW/°C
°C/W
°C/W
©2002 Fairchild Semiconductor Corporation
Rev. A2, November 2002