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| ES29LV800D Datasheet, PDF (40/50 Pages) Excel Semiconductor Inc. – 8Mbit(1M x 8/512K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory | |||
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EE SS II
Excel Semiconductor inc.
AC CHARACTERISTICS
Table 14. Alternate CE# Controlled Erase and Program Operations
Parameter
JEDEC Std.
Description
tAVAV
tWC
Write Cycle Time( Note 1)
Min
tAVWL
tAS
Address Setup Time
Min
tELAX
tAH
Address Hold Time
Min
tDVEH
tDS
Data Setup Time
Min
tEHDX
tDH
Data Hold Time
Min
tGHEL
tGHEL
Read Recovery Time Before Write (OE# High to WE# Low) Min
tWLEL
tWS
WE# Setup Time
Min
tEHWH
tWH
WE# Hold Time
Min
tELEH
tCP
CE# Pulse Width
Min
tELEL
tCPH
CE# Pulse Width High
Min
tWHWH1
tWHWH1 Programming Operation (Note 2)
Byte
Typ
Word
Typ
tWHWH2
tWHWH2 Sector Erase Operation (Note 2)
Typ
70 90 120 Unit
70 90
120 ns
0
ns
45 45
50
ns
35 45
50
ns
0
ns
0
ns
0
ns
0
ns
35 35
50
ns
30
ns
6
us
8
0.7
sec
Notes :
1. Not 100% tested
2. See the âErase And Programming Performanceâ section for more information.
ES29LV800D
40
Rev. 1D January 5, 2006
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