EIC6472-8 Datasheet, PDF (3/4 Pages) Excelics Semiconductor, Inc. – 6.40-7.20GHz 8-Watt Internally-Matched Power FET

UPDATED 08/21/2007
EIC6472-8
6.40-7.20GHz 8-Watt Internally-Matched Power FET
Power De-rating Curve and IM3 Definition
Power Dissipation vs. Temperature
40
35
30
Potentially Unsafe
Operating Region
25
20
15
Safe Operating
Region
10
5
THIRD-ORDER
INTERCEPT POINT IP3
f1 or f2
IP₃ = Pout + IM3/2
Pout
IM3
Pin
IM3
f1 f2
(2f1-f2) f1 f2 (2f2-f1)
(2f2 - f1) or (2f1 - f2)
0
0 25 50 75 100 125 150 175
Case Temperature (°C)
Pin [S.C.L.] (dBm)
Typical Power Data (V_DS = 10 V, I_DSQ = 2200 mA)
41
40
39
38
37
36
35
6.2
P-1dB & G-1dB vs Frequency
14
13
12
11
10
9
P-1dB (dBm)
G-1dB (dB)
8
6.4
6.6
6.8
7.0
7.2
7.4
Frequency (GHz)
Typical IM3 Data (V_DS = 10 V, I_DSQ ≈ 65% IDSS)
IM3 vs Output Power
f1 = 7.20 GHz, f2 = 7.21 GHz
-15
-20
-25
-30
-35
-40
-45
-50
-55
-60
IM3 (dBc)
-65
23 24 25 26 27 28 29 30 31 32 33 34 35
Pout [S.C.L.] (dBm)
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: [phone] Fax: [phone] Web: www.excelics.com
page 3 of 4
Revised October 2007