EFC240D Datasheet, PDF (2/2 Pages) Excelics Semiconductor, Inc. – Low Distortion GaAs Power FET

EFC240D
PRELIMINARY DATA SHEET
Low Distortion GaAs Power FET
S-PARAMETERS
10V, 1/2 Idss
Freq S11 S11 S21
GHz Mag Ang Mag
0.500 0.962 -66.3 11.912
1.000 0.933 -106.1 8.577
1.500 0.859 -121.0 6.591
2.000 0.860 -136.6 5.272
2.500 0.849 -147.5 4.344
3.000 0.848 -155.8 3.689
3.500 0.846 -162.2 3.195
4.000 0.846 -167.3 2.809
4.500 0.849 -172.0 2.472
5.000 0.856 -176.1 2.229
5.500 0.853 -179.3 2.024
6.000 0.855 177.4 1.852
6.500 0.857 174.4 1.708
7.000 0.861 171.7 1.577
7.500 0.861 169.3 1.466
8.000 0.865 167.0 1.375
8.500 0.869 165.2 1.288
9.000 0.873 163.5 1.213
9.500 0.877 161.9 1.146
10.000 0.876 160.4 1.085
S21
Ang
141.2
117.9
108.2
97.9
89.7
82.9
76.9
71.5
66.5
61.8
57.2
52.9
48.7
44.8
41.0
37.2
33.7
30.1
26.8
23.3
S12
Mag
0.025
0.036
0.042
0.044
0.046
0.047
0.047
0.048
0.047
0.048
0.048
0.048
0.048
0.049
0.049
0.049
0.050
0.050
0.052
0.053
S12
Ang
55.9
36.9
32.6
26.7
22.6
20.8
19.4
18.7
18.7
18.6
18.8
20.4
19.7
20.7
20.7
21.7
22.1
24.0
24.7
25.4
S22 S22
Mag Ang
0.239 -129.1
0.337 -144.0
0.303 -146.3
0.330 -151.9
0.343 -155.1
0.354 -157.6
0.365 -159.4
0.373 -160.6
0.389 -162.9
0.399 -163.5
0.411 -164.5
0.422 -165.6
0.434 -165.8
0.444 -166.5
0.457 -167.7
0.468 -168.4
0.477 -169.7
0.487 -171.2
0.500 -172.4
0.509 -174.2
Note:
The data included 0.7 mils diameter Au bonding wires:
1 gate wires, 20 mils each; 2 drain wires, 12 mils each; 4 source wires, 7 mils each.