RFMA5065-2W Datasheet, PDF (1/2 Pages) Excelics Semiconductor, Inc. – 5.0 - 6.5 GHz Power Amplifier MMIC

RFMA5065-2W
UPDATED 09/01/2006
5.0 – 6.5 GHz Power Amplifier MMIC
FEATURES
• 5.0 – 6.5 GHz Operating Frequency Range
• 33dBm Output Power at 1dB Compression
• 30.0 dB Typical Power Gain @1dB gain compression
• -44dBc Typical OIM3 @ each tone Pout 22dBm
APPLICATIONS
• Point-to-point and point-to-multipoint radio
• Military Radar Systems
N/C
Excelics
RF IN
RFMA5065
-2W-02
N/C
Vg
Vd
N/C
RF OUT
N/C
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (Tb = 25 °C, 50 ohm, Vdd=10V, Vgg=-5V)
SYMBOL
PARAMETER/TEST CONDITIONS
MIN
TYP
MAX UNITS
F
Operating Frequency Range
5.0
6.5
GHz
P1dB
Output Power at 1dB Gain Compression
32
33
dBm
G1dB
Gain @1dB gain compression
28.0
32.0
dB
Output 3^rd Order Intermodulation Distortion
OIMD3
@∆f=10MHz, Each Tone Pout 22dBm
-40
-44
dBc
Input RL Input Return Loss
-12
-6
dB
Output RL Output Return Loss
-6
dB
Idd
Drain Current @small signal output power level
1260
1500
mA
Vdd
Drain Supply Voltage
10
V
Vgg
Gate Supply Voltage
Rth
Thermal Resistance
-5
V
4
4.5
o_C/W
Tb
Operating Base Plate Temperature
MAXIMUM RATINGS @25°C^1,2
- 30
+ 80
ºC
SYMBOL
CHARACTERISTIC
ABSOLUTE
CONTINUOUS
Vdd Drain Supply Voltage
14V
10V
Vgg Gate Supply Voltage
-10V
-5.5 V
Idq
Quiescent Drain Current
Idss
1.5A
Igg
Gate Current
150mA
50 mA
P_IN
Input Power
8dBm
@ 3dB compression
T_CH
Channel Temperature
175°C
150°C
T_STG
Storage Temperature
-65/175°C
-65/150°C
Pt
Total Power Dissipation
30W
15W
1. Operating the device beyond any of the above rating may reduce MTTF and cause permanent damage.
2. Bias conditions must also satisfy the following equation Vdd*Idd < (T_CH –Tb)/R_TH
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 1 of 2
Phone: [phone] Fax: [phone] Web: www.excelics.com
Revised September 2006