RFMA5065-1W Datasheet, PDF (1/2 Pages) Excelics Semiconductor, Inc. – 5.0 - 6.5 GHz Power Amplifier MMIC

ISSUE DATE 08/29/06
RFMA5065-1W
5.0 – 6.5 GHz Power Amplifier MMIC
FEATURES
• 5.0– 6.5GHz Operating Frequency Range
• 30dBm Output Power at 1dB Compression
• 37.0 dB Typical Power Gain @1dB Gain Compression
• -38dBc Maximum OIM3 @ Each Tone Pout 18.5dBm
APPLICATIONS
• Point-to-Point And Point-to-Multipoint Radio
• Military Radar Systems
N/C
Excelics
RFMA5065
RF IN
-1W-03
Vg
Vd
RF OUT
Vd
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (Tb = 25 °C, 50 ohm, Vdd=7V, Vgg=-5V)
SYMBOL
PARAMETER/TEST CONDITIONS
MIN
TYP
MAX UNITS
F
Operating Frequency Range
5.0
6.5
GHz
P1dB
Output Power at 1dB Gain Compression
28.5
30
dBm
G1dB
OIMD3
Input RL
Gain @1dB gain compression
Output 3^rd Order Intermodulation Distortion
@∆f=10MHz, Each Tone Pout 18.5dBm
Input Return Loss
31.0
37.0
dB
-41
-38
dBc
-12
-6
dB
Output RL Output Return Loss
-6
dB
Idd
Drain Current @small signal output power level
950
1100
mA
Vdd
Drain Supply Voltage
7
V
Vgg
Gate Supply Voltage
Rth
Thermal Resistance
-5
V
7
o_C/W
Tb
Operating Base Plate Temperature
MAXIMUM RATINGS @25°C^1,2
- 30
+ 80
ºC
SYMBOL
CHARACTERISTIC
ABSOLUTE
CONTINUOUS ^1,2
V_DD
Drain Supply Voltage
10V
8V
V_GG
Gate Supply Voltage
-8V
-3 V
I_DQ
Quiescent Drain Current
Idss
1.1A
I_GG
Gate Current
60mA
30 mA
P_IN
Input Power
20dBm
@ 3dB compression
T_CH
Channel Temperature
175°C
150°C
T_STG
Storage Temperature
-65/175°C
-65/150°C
P_T
Total Power Dissipation
15W
Notes:
1. Operating the device beyond any of the above rating may reduce MTTF and cause permanent damage.
2. Bias conditions must also satisfy the following equation Vdd*Idd < (T_CH –Tb)/R_TH
12.6W
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: [phone] Fax: [phone] Web: www.excelics.com
page 1 of 2
Revised August 2006