RFMA2124-2W-P3 Datasheet, PDF (1/2 Pages) Excelics Semiconductor, Inc. – 21.2 - 23.6 GHz Power Amplifier MMIC

UPDATED: 01/09/2007
RFMA2124-2W-P3
21.2 – 23.6 GHz Power Amplifier MMIC
FEATURES
• 21.2– 23.6GHz Operating Frequency Range
• 31.0dBm Output Power at 1dB Compression
• 22dB Typical Power Gain @ 1dB Gain Compression
• -39dBc Typical OIM3 @ each tone Pout 20dBm
Vg
Excelics
RFMA2124
RF IN
-2W-P3
Vg
Vd
RF OUT
Vd
APPLICATIONS
• Point-to-point and point-to-multipoint radio
• Military Radar Systems
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (T_a = 25 °C, 50 ohm, Vdd=7V, Vgg=-5V)
SYMBOL
PARAMETER/TEST CONDITIONS
MIN
TYP
MAX
F
Operating Frequency Range
21.2
23.6
P1dB
Output Power at 1dB Gain Compression
30.0
31.0
G1dB
OIMD3
Input RL
Gain @ 1dB gain compression
Output 3^rd Order Intermodulation Distortion
@∆f=10MHz, Each Tone Pout 20dBm
Input Return Loss
18.0
22.0
-39
-36
-10
Output RL Output Return Loss
-15
-10
Idd
Drain Current
1700
2300
Vdd
Drain Voltage
7
8
Vgg
Gate Voltage
-5
Rth
Thermal Resistance (Au-Sn Eutectic Attach)
4.0
4.5
Tb
Operating Base Plate Temperature
-30
+80
UNITS
GHz
dBm
dB
dBc
dB
dB
mA
V
V
o_C/W
ºC
MAXIMUM RATINGS @25°C
SYMBOL
CHARACTERISTIC
ABSOLUTE
CONTINUOUS ^1,2
V_DD
Drain Supply Voltage
12V
8V
V_GG
Gate Supply Voltage
-8V
-3V
I_DD
Drain Current
Idss
3.6A
P_IN
Input Power
20dBm
@ 3dB compression
T_CH
Channel Temperature
175°C
150°C
T_STG
Storage Temperature
-65/175°C
-65/150°C
P_T
Total Power Dissipation
30.0W
25.2W
1. Operating the device beyond any of the above rating may result in permanent damage.
2. Bias conditions must also satisfy the following equation Vdd*Idd < (T_CH –Tb)/R_TH; where T_b = operating base plate temperature
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: [phone] Fax: [phone] Web: www.excelics.com
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Revised January 2007