RFMA2124-1W Datasheet, PDF (1/3 Pages) Excelics Semiconductor, Inc. – 21.2 - 23.6 GHz Power Amplifier MMIC

UPDATED 10/25/2006
RFMA2124-1W
21.2 – 23.6 GHz Power Amplifier MMIC
FEATURES
• 21.2 – 23.6 GHz Operating Frequency Range
• 28.5dBm Output Power at 1dB Compression
• 22 dB Typical Power Gain @1dB gain Compression
• -41dBc Typical OIM3 @ Each Tone Pout 18dBm
APPLICATIONS
• Point-to-point and point-to-multipoint radio
• Military Radar Systems
Excelics
RFMA2124
-1W
Different packages are available
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (T_a = 25 °C, 50 ohm, Vdd=7V, Vgg=-5V)
SYMBOL
PARAMETER/TEST CONDITIONS
MIN
TYP
MAX
UNITS
F
Operating Frequency Range
21.2
23.6
GHz
P1dB
Output Power at 1dB Gain Compression
27
28.5
dBm
G1dB
OIMD3
Gain @1dB gain compression
Output 3^rd Order Intermodulation Distortion
@∆f=10MHz, Each Tone Pout 17dBm
18
22
dB
-41
-38
dBc
Input RL Input Return Loss
-10
dB
Output RL Output Return Loss
-15
-10
dB
Idd
Drain Current
1100
1400
mA
Vdd
Drain Voltage
7
8
V
Vgg
Gate Voltage
Rth
Thermal Resistance (Au-Sn Eutectic Attach)
-5
V
7
7.5
o_C/W
Tb
Operating Base Plate Temperature
- 30
+ 80
ºC
MAXIMUM RATINGS AT 25°C
SYMBOL
CHARACTERISTIC
ABSOLUTE
CONTINUOUS
Vdd Drain Supply Voltage
12V
8V
Vgg Gate Supply Voltage
-8V
-3 V
Idd Drain Current
Idss
1.9A
Igg Gate Current
132mA
22 mA
P_IN
Input Power
20dBm
@ 3dB compression
T_CH
Channel Temperature
175°C
150°C
T_STG Storage Temperature
-65/175°C
-65/150°C
1. Operating the device beyond any of the above rating may result in permanent damage.
2. Bias conditions must also satisfy the following equation Vdd*Idd < (T_CH –T_HS)/R_TH; where T_HS = base plate temperature
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 1 of 3
Phone: [phone] Fax: [phone] Web: www.excelics.com
Revised November 2006