RFMA1315-1W Datasheet, PDF (1/2 Pages) Excelics Semiconductor, Inc. – 13.0 - 15.0 GHz Power Amplifier MMIC

ISSUED 11/18/2005
RFMA1315-1W
13.0 – 15.0 GHz Power Amplifier MMIC
FEATURES
• 13.0– 15.0GHz Operating Frequency Range
• 29.5dBm Output Power at 1dB Compression
• 30.0 dB Typical Small Signal Gain
• -41dBc Typical OIM3 @ each tone Pout 18.5dBm
N/C
Excelics
RFMA1315
RF IN
-1W-03
Vg
Vd
RF OUT
Vd
APPLICATIONS
• Point-to-point and point-to-multipoint radio
• Military Radar Systems
Different Packages Are Available
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (T_a = 25 °C, 50 ohm, Vdd=7V, Vgg=-5V)
SYMBOL
PARAMETER/TEST CONDITIONS
MIN
TYP
MAX
F
Operating Frequency Range
13.0
15.0
P1dB
Output Power at 1dB Gain Compression
28.5
29.5
G_SS
OIMD3
Small Signal Gain
Output 3^rd Order Intermodulation Distortion
@∆f=10MHz, Each Tone Pout 18.5dBm
27.0
30.0
-41
-38
Input RL Input Return Loss
-10
-7
Output RL Output Return Loss
-12
-10
Idd
Drain Current
900
1050
Vdd
Drain Supply Voltage
7
8
Rth
Thermal Resistance (Au-Sn Eutectic Attach)
7
Tb
Operating Base Plate Temperature
-30
+80
UNITS
GHz
dBm
dB
dBc
dB
dB
mA
V
o_C/W
ºC
MAXIMUM RATINGS @25°C
SYMBOL
CHARACTERISTIC
ABSOLUTE
CONTINUOUS ^1,2
V_DD
Drain Supply Voltage
12V
8V
V_GG
Gate Supply Voltage
-8V
-3V
I_DD
Drain Current
Idss
1.1A
I_GG
Gate Current
60mA
10 mA
P_IN
Input Power
20dBm
@ 3dB compression
T_CH
Channel Temperature
175°C
150°C
T_STG
Storage Temperature
-65/175°C
-65/150°C
P_T
Total Power Dissipation
15.0W
12.6W
1. Operating the device beyond any of the above rating may result in permanent damage.
2. Bias conditions must also satisfy the following equation Vdd*Idd < (T_CH –Tb)/R_TH; where T_b = operating base plate temperature
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 1 of 2
Phone: [phone] Fax: [phone] Web: www.excelics.com
Revised November 2005