RFMA1213-2W Datasheet, PDF (1/2 Pages) Excelics Semiconductor, Inc. – 12.7 - 13.3 GHz Power Amplifier MMIC

ISSUEED 4/11/2005
RFMA1213-2W
12.7 – 13.3 GHz Power Amplifier MMIC
FEATURES
• 12.70– 13.30GHz Operating Frequency Range
• 32.5dBm Output Power at 1dB Compression
• 29.0 dB Typical Power Gain @ 1dB Gain Compression
• -41dBc Typical OIM3 @ each tone Pout 21.5dBm
Excelics
RFMA1213
-2W
APPLICATIONS
• Point-to-point and point-to-multipoint radio
• Military Radar Systems
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (T_a = 25 °C, 50 ohm, Vdd=7V, Vgg=-5V)
SYMBOL
PARAMETER/TEST CONDITIONS
MIN
TYP
F
Operating Frequency Range
12.7
P1dB
Output Power at 1dB Gain Compression
31.5
32.5
G1dB
OIMD3
Gain @ 1dB gain compression
Output 3^rd Order Intermodulation Distortion
@∆f=10MHz, Each Tone Pout 21.5dBm
26.0
29.0
-41
Input RL Input Return Loss
-12
Output RL Output Return Loss
-15
Idd
Drain Current
1900
Vdd
Drain Voltage
7
Vgg
Gate Voltage
-5
Rth
Thermal Resistance (Au-Sn Eutectic Attach)
4.0
Tb
Operating Base Plate Temperature
-30
MAX
13.3
-38
-8
-8
2150
8
4.5
+80
UNITS
GHz
dBm
dB
dBc
dB
dB
mA
V
V
o_C/W
ºC
MAXIMUM RATINGS @25°C
SYMBOL
CHARACTERISTIC
ABSOLUTE
CONTINUOUS ^1,2
V_DD
Drain Supply Voltage
12V
8V
V_GG
Gate Supply Voltage
-8V
-3V
I_DD
Drain Current
Idss
3.6A
I_GG
Gate Current
240mA
40mA
P_IN
Input Power
20dBm
@ 3dB compression
T_CH
Channel Temperature
175°C
150°C
T_STG
Storage Temperature
-65/175°C
-65/150°C
P_T
Total Power Dissipation
30.0W
25.2W
1. Operating the device beyond any of the above rating may result in permanent damage.
2. Bias conditions must also satisfy the following equation Vdd*Idd < (T_CH –Tb)/R_TH; where T_b = operating base plate temperature
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: [phone] Fax: [phone] Web: www.excelics.com
page 1 of 2
Revised April 2005