RFMA1213-1W Datasheet, PDF (1/2 Pages) Excelics Semiconductor, Inc. – 12.70 - 13.30 GHz Power Amplifier MMIC

ISSUED 05/06/2005
RFMA1213-1W
12.70 – 13.30 GHz Power Amplifier MMIC
FEATURES
• 12.70–13.30GHz Operating Frequency Range
• 29.5dBm Output Power at 1dB Compression
• 29.0 dB Typical Power Gain @ 1dB Gain Compression
• -41dBc Typical OIM3 @ each tone Pout 18.5dBm
Excelics
RFMA1213
-1W
APPLICATIONS
• Point-to-point and point-to-multipoint radio
• Military Radar Systems
Different Packages Are Available
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (T_a = 25 °C, 50 ohm, Vdd=7V, Vgg=-5V)
SYMBOL
PARAMETER/TEST CONDITIONS
MIN
TYP
MAX
F
Operating Frequency Range
12.7
13.3
UNITS
GHz
P1dB
G1dB
OIMD3
Input RL
Output Power at 1dB Gain Compression
Gain @1dB gain compression
Output 3^rd Order Intermodulation Distortion
@∆f=10MHz, Each Tone Pout 18.5dBm
Input Return Loss
28.5 29.5
26
29
dBm
dB
-41
-38
dBc
-12
-8
dB
Output RL Output Return Loss
-15
dB
Idd
Drain Current
900
1050
mA
Vdd
Drain Supply Voltage
7
8
V
Vgg
Gate Supply Voltage
Rth
Thermal Resistance (Au-Sn Eutectic Attach)
-5
V
7
7.5
o_C/W
Tb
Operating Base Plate Temperature
- 30
+ 80
ºC
MAXIMUM RATINGS AT 25°C
SYMBOL
CHARACTERISTIC
ABSOLUTE
CONTINUOUS^1,2
Vdd
Drain Supply Voltage
12V
8V
Vgg
Gate Supply Voltage
-8V
-3 V
Idd
Drain Current
Idss
1.9A
Igg
Gate Current
132mA
22 mA
P_IN
Input Power
20dBm
@ 3dB compression
T_CH
Channel Temperature
175°C
150°C
T_STG
Storage Temperature
-65/175°C
-65/150°C
P_T
Total Power Dissipation
15.0W
12.6W
1. Operating the device beyond any of the above rating may result in permanent damage.
2. Bias conditions must also satisfy the following equation Vdd*Idd < (T_CH –T_HS)/R_TH; where T_HS = Base Plate temperature
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Page 1 of 2
Phone: [phone] Fax: [phone] Web: www.excelics.com
Revised May 2005