RFMA1013-1W Datasheet, PDF (1/3 Pages) Excelics Semiconductor, Inc. – 10.30 - 13.30 GHz Power Amplifier MMIC

UPDATED 05/08/2008
RFMA1013-1W
10.30 – 13.30 GHz Power Amplifier MMIC
FEATURES
• 10.30 – 13.30GHz Operating Frequency Range
• 29.5dBm Output Power at 1dB Compression
• 31.0 dB Typical Power Gain @ 1dB Gain Compression
• -41dBc Typical OIM3 @ each tone Pout 19.0dBm
Excelics
RFMA1013
-1W
APPLICATIONS
• Point-to-point and point-to-multipoint radio
• Military Radar Systems
Different Packages Are Available
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (T_a = 25 °C, 50 ohm, Vdd=7V, Vgg=-5V)
SYMBOL
PARAMETER/TEST CONDITIONS
MIN TYP MAX UNITS
F
P1dB
G1dB
OIMD3
Input RL
Output RL
Operating Frequency Range
Output Power at 1dB Gain Compression
Gain @1dB gain compression
Output 3^rd Order Intermodulation Distortion
@∆f=10MHz, Each Tone Pout 19dBm
Input Return Loss
Output Return Loss
10.3
13.3 GHz
29
29.5
28
31
dBm
dB
-38
-41
dBc
-10
-8
dB
-6
dB
Idd
Drain Current
Vdd
Drain Supply Voltage
900 1050 mA
7
8
V
Vgg
Gate Supply Voltage
Rth
Thermal Resistance (Au-Sn Eutectic Attach)
-5
V
7
7.5
o_C/W
Tb
Operating Base Plate Temperature
- 30
+ 80
ºC
MAXIMUM RATINGS AT 25°C
SYMBOL
CHARACTERISTIC
ABSOLUTE
CONTINUOUS^1,2
Vdd
Drain Supply Voltage
12V
8V
Vgg
Gate Supply Voltage
-8V
-3 V
Idd
Drain Current
Idss
1.9A
Igg
Gate Current
132mA
22 mA
P_IN
Input Power
20dBm
@ 3dB compression
T_CH
Channel Temperature
175°C
150°C
T_STG
Storage Temperature
-65/175°C
-65/150°C
P_T
Total Power Dissipation
15.0W
12.6W
1. Operating the device beyond any of the above rating may result in permanent damage.
2. Bias conditions must also satisfy the following equation Vdd*Idd < (T_CH –T_HS)/R_TH; where T_HS = Base Plate temperature
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: [phone] Fax: [phone] Web: www.excelics.com
page 1 of 3
Revised May 2008